# Contact-less characterizations of encapsulated graphene p-n junctions

## TL;DR

This paper introduces a contact-less method to characterize graphene p-n junctions using superconducting resonant circuits, enabling non-invasive, sensitive measurements of their internal charge dynamics and properties.

## Contribution

It presents a novel contact-less approach to analyze graphene devices, avoiding contact electrode influence and providing detailed internal charge dynamics information.

## Key findings

- Capacitive coupling reveals charge relaxation resistance.
- Resonance frequency shifts indicate density of states.
- Method offers fast, non-invasive characterization.

## Abstract

Accessing intrinsic properties of a graphene device can be hindered by the influence of contact electrodes. Here, we capacitively couple graphene devices to superconducting resonant circuits and observe clear changes in the resonance- frequency and -widths originating from the internal charge dynamics of graphene. This allows us to extract the density of states and charge relaxation resistance in graphene p-n junctions without the need of electrical contacts. The presented characterizations pave a fast, sensitive and non-invasive measurement of graphene nanocircuits.