# Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions

## TL;DR

This paper introduces a novel atomistic quantum transport model that combines equilibrium and non-equilibrium carrier statistics to accurately simulate tunneling hetero-junctions, accounting for both coherent tunneling and scattering effects.

## Contribution

The work presents a new atomistic model integrating both scattering and coherent tunneling effects in THJs, improving accuracy and efficiency over previous models.

## Key findings

- Model matches well with experimental Nitride THJ data
- Provides an efficient tool for device performance prediction
- Enhances understanding of transport properties in THJs

## Abstract

Tunneling hetero-junctions (THJs) usually induce confined states at the regions close to the tunnel junction which significantly affect their transport properties. Accurate numerical modeling of such effects requires combining the non-equilibrium coherent quantum transport through tunnel junction, as well as the quasi-equilibrium statistics arising from the strong scattering in the induced quantum wells. In this work, a novel atomistic model is proposed to include both effects: the strong scattering in the regions around THJ and the coherent tunneling. The new model matches reasonably well with experimental measurements of Nitride THJ and provides an efficient engineering tool for performance prediction and design of THJ based devices.