Band Structure, Band Offsets, Substitutional Doping, and Schottky Barriers in InSe

TL;DR

This study uses density functional theory to analyze the electronic structure, defects, and interfaces of InSe, revealing its suitability for tunnel FETs and detailing its band properties and defect behavior.

Contribution

It provides a comprehensive theoretical analysis of InSe's electronic properties, including band structure, defects, and metal interfaces, with implications for device applications.

Findings

Monolayer InSe band gap is 2.4 eV.

Se adatom is the lowest energy defect in Se-rich layers.

Schottky barriers are strongly pinned by metal-induced gap states.

Abstract

We present a comprehensive study of the electronic structure of the layered semiconductor InSe using density functional theory. We calculate the band structure of the monolayer and bulk material with the band gap corrected using hybrid functionals. The band gap of the monolayer is 2.4 eV. The band edge states are surprising isotropic. The electron affinities and band offsets are then calculated for heterostructures as would be used in tunnel field effect transistors (TFETs). The ionization potential of InSe is quite large, similar to that of HfSe2 or SnSe2, and so InSe is suitable to act as the drain in the TFET. The intrinsic defects are then calculated. For Se-rich layers, the Se adatom is the lowest energy defect, whereas for In-rich layers, the In adatom is most stable for Fermi energies across most of the gap. Both substitutional donors and acceptors are calculated to be shallow, and not reconstructed. Finally, the Schottky barriers of metals are found to be strongly pinned, with the Fermi level pinned by metal induced gap states about 0.5 eV above the valence band edge.