# Gate tunable current partition in graphene based topological zero lines

## TL;DR

This paper introduces a method to control current routing in graphene topological zero lines using gate voltages and magnetic fields, enabling tunable current partitioning for potential electronic applications.

## Contribution

It presents a novel approach to gate-tunable current partitioning at zero-line intersections in graphene, combining magnetic field effects and electrostatic control.

## Key findings

- Magnetic fields enable carrier sign dependent current routing.
- Current partition can be tuned between 10% and 90%.
- Gate voltages and carrier density control current distribution.

## Abstract

We demonstrate new mechanisms for gate tunable current partition at topological zero-line intersections in a graphene-based current splitter. Based on numerical calculations of the non-equilibrium Green's functions and Landauer-B\"{u}ttiker formula, we show that the presence of a perpendicular magnetic field on the order of a few Teslas allows for carrier sign dependent current routing. In the zero-field limit the control on current routing and partition can be achieved within a range of $10\%$-$90\%$ of the total incoming current by tuning the carrier density at tilted intersections, or by modifying the relative magnitude of the bulk band gaps via gate voltage. We discuss the implications of our findings in the design of topological zero-line networks where finite orbital magnetic moments are expected when the current partition is asymmetric.