# Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES

## TL;DR

This study uses nano-ARPES to investigate how different stacking angles in transferred graphene/h-BN heterostructures affect their electronic structures, revealing Moiré superlattice effects and angle-dependent interactions.

## Contribution

It provides the first nanoscale ARPES measurements of transferred graphene/h-BN with nonzero stacking angles, linking superlattice features to stacking geometry.

## Key findings

- Six replicas of graphene Dirac cones observed at superlattice Brillouin zone centers
- Superlattice size and rotation angle match AFM measurements
- Interaction strength decreases with increasing stacking angle

## Abstract

In van der Waals heterostructures, the periodic potential from the Moir\'e superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (Nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4{\deg} and 4.3{\deg} respectively. Our measurements reveal six replicas of graphene Dirac cones at the superlattice Brillouin zone (SBZ) centers. The size of the SBZ and its relative rotation angle to the graphene BZ are in good agreement with Moir\'e superlattice period extracted from atomic force microscopy (AFM) measurements. Comparison to epitaxial graphene/h-BN with 0{\deg} stacking angles suggests that the interaction between graphene and h-BN decreases with increasing stacking angle.