A micrometer-thick oxide film with high thermoelectric performance at temperature ranging from 20-400 K

TL;DR

This study demonstrates a micrometer-thick SrNb0.2Ti0.8O3 oxide film with high thermoelectric efficiency at 20-400 K, achieved through interface and lattice polarization regulation, offering practical advantages over traditional 2DEG materials.

Contribution

The paper reports a novel approach to attain high thermoelectric performance in relatively thick oxide films without the need for nanometer-scale confinement.

Findings

Achieved zT up to 1.6 near room temperature.

High power factor of up to 103 μWcm^-1K^-2.

Reduced size-confinement dependence by ~10^3 compared to 2DEG materials.

Abstract

Thermoelectric (TE) materials achieve localised conversion between thermal and electric energies, and the conversion efficiency is determined by a figure of merit zT. Up to date, two-dimensional electron gas (2DEG) related TE materials hold the records for zT near room-temperature. A sharp increase in zT up to ~2.0 was observed previously for superlattice materials such as PbSeTe, Bi2Te3/Sb2Te3 and SrNb0.2Ti0.8O3/SrTiO3, when the thicknesses of these TE materials were spatially confine within sub-nanometre scale. The two-dimensional confinement of carriers enlarges the density of states near the Fermi energy3-6 and triggers electron phonon coupling. This overcomes the conventional {\sigma}-S trade-off to more independently improve S, and thereby further increases thermoelectric power factors (PF=S2{\sigma}). Nevertheless, practical applications of the present 2DEG materials for high power energy conversions are impeded by the prerequisite of spatial confinement, as the amount of TE material is insufficient. Here, we report similar TE properties to 2DEGs but achieved in SrNb0.2Ti0.8O3 films with thickness within sub-micrometer scale by regulating interfacial and lattice polarizations. High power factor (up to 103 {\mu}Wcm-1K-2) and zT value (up to 1.6) were observed for the film materials near room-temperature and below. Even reckon in the thickness of the substrate, an integrated power factor of both film and substrate approaching to be 102 {\mu}Wcm-1K-2 was achieved in a 2 {\mu}m-thick SrNb0.2Ti0.8O3 film grown on a 100 {\mu}m-thick SrTiO3 substrate. The dependence of high TE performances on size-confinement is reduced by ~103 compared to the conventional 2DEG-related TE materials. As-grown oxide films are less toxic and not dependent on large amounts of heavy elements, potentially paving the way towards applications in localised refrigeration and electric power generations.