Investigation of helicity-dependent photocurrent at room temperature from a Fe/x-AlOx/p-GaAs Schottky junction with oblique surface illumination

TL;DR

This study measures helicity-dependent photocurrent in a Fe/x-AlOx/p-GaAs Schottky diode at room temperature, revealing how oblique surface illumination enhances photocurrent conversion efficiency and comparing experimental results with a spin transport model.

Contribution

It provides the first detailed comparison of helicity-dependent photocurrent under different illumination geometries and validates a drift-diffusion and spin-dependent tunneling model for the system.

Findings

Oblique-angle illumination yields higher conversion efficiency (1.2%) than sidewall illumination (0.1%).

The model explains the data well for oblique illumination but not for sidewall illumination.

Surface recombination and microscopic damage affect the photocurrent efficiency.

Abstract

In view of a study on spin-polarized photodiodes, the helicity-dependent photocurrent in a Fe/x-AlOx/p-GaAs Schottky diode is measured at room temperature by illuminating a circularly polarized light beam (785 nm) either horizontally on the cleaved sidewall or at an oblique angle on the top metal surface. The plane of incidence is fixed to be parallel to the magnetization vector of the in-plane magnetized Fe electrode. The conversion efficiency F, which is a relative value of helicity-dependent photocurrent with respect to the total photocurrent, is determined to be 1.0*10^-3 and 1.2*10^-2 for sidewall illumination and oblique-angle illumination, respectively. Experimental data are compared with the results of a model calculation consisting of drift-diffusion and Julliere spin-dependent tunneling transports, from which two conclusions are obtained: the model accounts fairly well for the experimental data without introducing the annihilation of spin-polarized carriers at the x-AlOx/p-GaAs interface for the oblique-angle illumination, but the model does not fully explain the relatively low F in terms of the surface recombination at the cleaved sidewall in the case of sidewall illumination. Microscopic damage to the tunneling barrier at the cleaved edge would be one possible cause of the reduced F.