Quantum-trajectory analysis for charge transfer in solid materials induced by strong laser fields

TL;DR

This paper explores how strong laser fields influence charge transfer in solid materials, revealing a sudden reversal in transfer direction and demonstrating control over electron trajectories in semiconductors using quantum-trajectory analysis.

Contribution

It introduces a quantum-trajectory analysis approach to understand and control charge transfer phenomena in solids under intense laser irradiation.

Findings

Charge transfer direction reverses at critical laser intensities.

Quantum-trajectory analysis highlights the role of Bloch oscillations.

Charge transfer in GaN can be controlled via pump-probe schemes.

Abstract

We investigate the dependence of charge transfer on the intensity of driving laser field when SiO2 crystal is irradiated by an 800 nm laser. It is surprising that the direction of charge transfer undergoes a sudden reversal when the driving laser intensity exceeds critical values with different carrier envelope phases. By applying quantum-trajectory analysis, we find that the Bloch oscillation plays an important role in charge transfer in solid. Also, we study the interaction of strong laser with gallium nitride (GaN) that is widely used in optoelectronics. A pump-probe scheme is applied to control the quantum trajectories of the electrons in the conduction band. The signal of charge transfer is controlled successfully by means of theoretically proposed approach.