# Gate-controlled valley transport and Goos-H\"{a}nchen effect in monolayer WS$_2$

## TL;DR

This paper investigates how gate voltages influence spin-valley transport and the Goos-H"anchen effect in monolayer WS$_2$, revealing tunable lateral shifts and potential for valley filtering in nanoelectronics.

## Contribution

It introduces a theoretical framework for controlling valley and spin transport via gating in monolayer WS$_2$, highlighting the tunability of lateral shifts and symmetry breaking effects.

## Key findings

- Lateral shifts depend on gated region width and can be positive or negative.
- Resonance enhances lateral displacements near the critical incident angle.
- Reflected beam shifts break spin-valley symmetry, unlike transmitted beams.

## Abstract

Based on a Dirac-like Hamiltonian and coherent scattering formalism, we study spin-valley transport and Goos-H\"{a}nchen like (GHL) effect of transmitted and reflected electrons in a gated monolayer WS$_2$. Our results show that the lateral shift of spin-polarized electrons is strongly dependent on the width of the gated region and can be positive or negative in both Klein tunneling and classical motion regimes. The absolute values of the lateral displacements at resonance positions can be considerably enhanced when the incident angle of electrons is close to the critical angle. In contrast to the time reversal symmetry for the transmitted electrons, the GHL shift of the reflected beams is not invariant under simultaneous interchange of spins and valleys, indicating the lack of spin-valley symmetry induced by the tunable potential barrier on WS$_2$ monolayer. Our findings provide evidence for electrical control of valley filtering and valley beam splitting by tuning the incident angle of electrons in nanoelectronic devices based on monolayer transition metal dichalcogenides.