# Three-dimensionality of the bulk electronic structure in WTe2

## TL;DR

This study combines resistivity and ARPES measurements to reveal the three-dimensional bulk electronic structure of WTe2, showing multiple electron and hole pockets and demonstrating strong 3D characteristics.

## Contribution

It provides a detailed, experimentally verified picture of WTe2's 3D electronic structure using tunable ARPES and quantum oscillation data, highlighting the material's three-dimensionality.

## Key findings

- Bulk Fermi surface includes three pairs of electron pockets and two pairs of hole pockets.
- Photon energy tuning reveals additional tiny electron pockets, indicating 3D electronic structure.
- Resistivity and ARPES data are consistent in describing the electronic structure.

## Abstract

We use temperature- and field-dependent resistivity measurements [Shubnikov--de Haas (SdH) quantum oscillations] and ultrahigh resolution, tunable, vacuum ultraviolet (VUV) laser-based angle-resolved photoemission spectroscopy (ARPES) to study the three-dimensionality (3D) of the bulk electronic structure in WTe2, a type-II Weyl semimetal. The bulk Fermi surface (FS) consists of two pairs of electron pockets and two pairs of hole pockets along the X-Gamma-X direction as detected by using an incident photon energy of 6.7 eV, which is consistent with the previously reported data. However, if using an incident photon energy of 6.36 eV, another pair of tiny electron pockets is detected on both sides of the Gamma point, which is in agreement with the small quantum oscillation frequency peak observed in the magnetoresistance. Therefore, the bulk, 3D FS consists of three pairs of electron pockets and two pairs of hole pockets in total. With the ability of fine tuning the incident photon energy, we demonstrate the strong three-dimensionality of the bulk electronic structure in WTe2. The combination of resistivity and ARPES measurements reveal the complete, and consistent, picture of the bulk electronic structure of this material.