# In-Situ Growth of Graphene on Hexagonal Boron Nitride for Electronic Transport Applications

## TL;DR

This paper reviews the development of in-situ graphene growth on hexagonal boron nitride, highlighting advances that improve interface control and scalability for electronic applications.

## Contribution

It provides a comprehensive overview of the evolution and current status of direct graphene synthesis on h-BN, emphasizing overcoming fabrication challenges.

## Key findings

- Progress in controlling graphene orientation on h-BN
- Advances in scalable synthesis methods
- Potential for industrial device fabrication

## Abstract

Transferring graphene flakes onto hexagonal boron nitride (h-BN) has been the most popular approach for the fabrication of graphne/h-BN heterostructures so far. The orientation between graphene and h-BN lattices, however, are not controllable and the h-BN/graphene interfaces are prone to be contaminated during this elaborate process. Direct synthesis of graphene on h-BN is an alternative and rapidly growing approach. Synthesized graphene via such approaches is personally tailored to conform to each specific h-BN flakes, hence the limitations of conventional fabrication approaches are overcome. Reported processes paved the initial steps to improve the scalablity of the device fabrication for industrial applications. Reviewing the developments in the field, from the birth point to the current status is the focus of this letter. We show how the field has been developed to overcome the existing challenges one after the other and discuss where the field is heading to.