Topological transport in Dirac electronic systems: A concise review
Hua-Ding Song, Dian Sheng, An-Qi Wang, Jin-Guang Li, Da-Peng Yu and, Zhi-Min Liao
TL;DR
This review discusses the transport properties of various topological Dirac systems, emphasizing the role of Berry phase and curvature in understanding their unique electronic behaviors and potential applications.
Contribution
It provides a comprehensive overview of experimental and theoretical insights into topological transport phenomena across multiple Dirac materials and heterostructures.
Findings
Transport properties of Bi2Se3, Cd3As2, and heterojunctions are analyzed.
Topological edge, valley, and Weyl semimetal transport are discussed.
Perspectives on 2D topological systems are provided.
Abstract
Various novel physical properties have emerged in Dirac electronic systems, especially the topological characters protected by symmetry. Current studies on these systems have been greatly promoted by the intuitive concepts of Berry phase and Berry curvature, which provide precise definitions of the topological orders. In this topical review, transport properties of topological insulator (Bi2Se3), topological Dirac semimetal (Cd3As2) and topological insulator-graphene heterojunction are presented and discussed. Perspectives about transport properties of two-dimensional topological nontrivial systems, including topological edge transport, topological valley transport and topological Weyl semimetals, are provided.
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