Power nano- and picosecond optoelectronic switches based on high-voltage silicon structures with p-n-junctions. II. Energy efficiency

TL;DR

This paper investigates the energy efficiency of high-voltage silicon optoelectronic switches triggered by picosecond laser pulses, identifying optimal parameters for maximum efficiency around 92%, with photothyristors showing advantages at longer pulse durations.

Contribution

First study to analyze energy efficiency of silicon-based optoelectronic switches triggered by picosecond pulses, optimizing parameters for maximal efficiency.

Findings

Maximum efficiency of about 0.92 achieved.

All switch types have similar efficiency at short pulse durations.

Photothyristors outperform others at longer pulse durations.

Abstract

Energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors or photothyristors and triggered-on by picosecond laser pulses has been studied for the first time. For given values of resistive load, amplitude and duration $t_R$ of voltage pulses it is shown that there exist optimal sets of values for the device area, energy and absorption coefficient for triggering illumination, which provide the maximal general efficiency of the switch about 0.92. All three types of switches have almost identical efficiencies at short $t_R$, and in case of long $t_R$ photothyristors possess a noticeable advantage among them.