# Charge Coupled Device detectors with high quantum efficiency at UV wavelengths

## TL;DR

This paper presents advanced multilayer antireflection coatings for silicon-based UV detectors, achieving over 80% quantum efficiency in the 195-215 nm range, significantly improving UV detection performance.

## Contribution

Development of multilayer ARCs with up to 11 layers that surpass previous single-layer coatings, achieving over 80% QE in targeted UV wavelengths.

## Key findings

- Multilayer coatings reach >80% QE between 195-215 nm.
- Successful application of coatings on silicon and fused silica substrates.
- External QE of 67.6% at 206 nm on a delta-doped CCD.

## Abstract

We report on multilayer high efficiency antireflection coating (ARC) design and development for use at UV wavelengths on CCDs and other Si-based detectors. We have previously demonstrated a set of single-layer coatings, which achieve >50% quantum efficiency (QE) in four bands from 130 to 300 nm. We now present multilayer coating designs that significantly outperform our previous work between 195 and 215 nm. Using up to 11 layers, we present several model designs to reach QE above 80%. We also demonstrate the successful performance of 5 and 11 layer ARCs on silicon and fused silica substrates. Finally, we present a five-layer coat- ing deposited onto a thinned, delta-doped CCD and demonstrate external QE greater than 60% between 202 and 208 nm, with a peak of 67.6% at 206 nm.