Improved self-energy correction method for accurate and efficient band structure calculation

TL;DR

The paper introduces shell-LDA-1/2, an improved self-energy correction method that enhances the accuracy of band structure calculations for various semiconductors while maintaining computational efficiency.

Contribution

It presents a novel shell-like trimming function for self-energy correction, resolving previous ambiguities and improving accuracy for a wide range of semiconductors.

Findings

Accurately reproduces Ge band structure in agreement with experiments.

Provides clear rules for charge stripping choices in covalent semiconductors.

Identifies materials where shLDA-1/2 may not be effective.

Abstract

The LDA-1/2 method for self-energy correction is a powerful tool for calculating accurate band structures of semiconductors, while keeping the computational load as low as standard LDA. Nevertheless, controversies remain regarding the arbitrariness of choice between (1/2)e and (1/4)e charge stripping from the atoms in group IV semiconductors, the incorrect direct band gap predicted for Ge, and inaccurate band structures for III-V semiconductors. Here we propose an improved method named shell-LDA-1/2 (shLDA-1/2 for short), which is based on a shell-like trimming function for the self-energy potential. With the new approach, we obtained accurate band structures for group IV, and for III-V and II-VI compound semiconductors. In particular, we reproduced the complete band structure of Ge in good agreement with experimental data. Moreover, we have defined clear rules for choosing when (1/2)e or (1/4)e charge ought to be stripped in covalent semiconductors, and for identifying materials for which shLDA-1/2 is expected to fail.