Hybrid cold and hot-wall chamber for fast synthesis of uniform graphene

TL;DR

This paper presents a hybrid cold and hot-wall chamber system for rapid, cost-effective, and high-quality graphene synthesis via CVD, combining the advantages of both traditional chamber types.

Contribution

It introduces a novel hybrid chamber modality that enhances graphene quality while maintaining fast growth and low fuel consumption.

Findings

Graphene synthesized is uniform and monolayer.

Charge carrier mobility is significantly improved.

The method is suitable for scalable industrial applications.

Abstract

We introduce a novel modality in the CVD growth of graphene which combines the cold-wall and hot-wall reaction chambers. This hybrid mode preserves the advantages of a cold-wall chamber as the fast growth and low fuel consumption, but boosts the quality of the growth towards conventional CVD with hot-wall chambers. The synthesized graphene is uniform and monolayer. The electronic transport measurements shows great improvements in charge carrier mobility compared to graphene synthesized in a normal cold-wall reaction chamber. Our results promise the development of a fast and cost-efficient growth of high quality graphene, suitable for scalable industrial applications.