# Separate magnetization switching of hexagonal Co/BN/Co junctions grown epitaxially on c-sapphire

## TL;DR

This study demonstrates epitaxial growth of magnetic tunnel junctions with separate magnetization switching of Co layers, revealing potential for advanced spintronic devices with controlled magnetic states.

## Contribution

First demonstration of epitaxial Co/BN/Co junctions with distinct switching behaviors of top and bottom Co layers grown in a single process.

## Key findings

- Epitaxial growth of Co/BN/Co junctions achieved
- Separate magnetization switching of Co layers observed
- Antiparallel magnetic state at zero field detected

## Abstract

Magnetic tunnel junctions (MTJ) have been grown by using molecular beam epitaxy on c-plane Al2O3 substrates. The MTJ stacks consist of two ferromagnetic hcp-Co layers separated by a thin insulating h-BN barrier. The samples have been grown in a single run revealing single crystalline epitaxial structures with sharp interfaces as observed by applying transmission electron microscopy. The in-plane magnetization experiments have revealed separate magnetization switching of a thin top Co (soft) layer and a thick bottom Co (hard) layer. At zero magnetic field the two Co layers are found in an antiparallel state.

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Source: https://tomesphere.com/paper/1701.02027