Morphological Aspects of Porous Silicon Prepared by Photoelectrochemical Etching

TL;DR

This study investigates how coherent and incoherent light sources influence the structural properties of porous silicon created via photoelectrochemical etching, focusing on morphology, porosity, and etching dynamics.

Contribution

It provides a comparative analysis of laser and halogen lamp illumination effects on porous silicon's microstructure and etching characteristics.

Findings

Porosity varies with illumination type.

Surface morphology depends on light coherence.

Etching rate is affected by radiation source.

Abstract

In this work the effects of coherent radiation (Laser) and incoherent radiation (Halogen lamp) during the electrochemical etching process on the structural characteristics of n-type PSi samples were investigated. The porosity values were measured by depending on the microstructure analyses and Gravimetric measurements. Surface morphology, layer thickness, pore diameter, pore shape, wall thickness and etching rate were studied by depending on Scanning electron-microscopic (SEM) images