Quantum dot behavior in transition metal dichalcogenides nanostructures

TL;DR

This paper reviews the fabrication, confinement, and transport properties of quantum dots in transition metal dichalcogenides, highlighting their potential for quantum applications and the techniques used to create and study these nanostructures.

Contribution

It provides a comprehensive overview of the methods and recent advancements in fabricating and analyzing quantum dots in TMDC nanostructures, emphasizing their unique physical properties.

Findings

Advances in fabrication techniques like e-beam lithography for TMDC QDs.

Enhanced understanding of transport phenomena in TMDC quantum dots.

Potential for creating heterostructure QDs with diverse physical properties.

Abstract

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.