A double quantum dot memristor

TL;DR

This paper introduces a quantum model for memristive systems and demonstrates a practical implementation using quantum dots, highlighting their hysteresis and stochastic properties for quantum circuit applications.

Contribution

It provides the first quantum description of memristive systems and experimentally demonstrates a quantum dot-based memristor with unique hysteresis and stochastic features.

Findings

Quantum dot memristors exhibit hysteresis in current-voltage characteristics.

Quantum jump induced stochastic behavior observed in the device.

Practical scheme for quantum memristor realization demonstrated.

Abstract

Memristive systems are generalisations of memristors, which are resistors with memory. In this paper, we present a quantum description of memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realising memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e. switching of a trapped charge in the vicinity of the device. We show that quantum-dot memristive systems have hysteresis current-voltage characteristics and quantum jump induced stochastic behaviour. Realising such a quantum memristor completes the menu of components for quantum circuit design.