Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope
Evgeny M. Alexeev, Alessandro Catanzaro, Oleksandr V. Skrypka, Pramoda, K. Nayak, Seongjoon Ahn, Sangyeon Pak, Juwon Lee, Jung Inn Sohn, Kostya S., Novoselov, Hyeon Suk Shin, and Alexander I. Tartakovskii

TL;DR
This paper presents a bright-field optical microscopy method to monitor interlayer coupling in van der Waals heterostructures, enabling visualization of layer thickness, interface quality, and exciton formation in atomically thin materials.
Contribution
The study introduces a simple, effective optical imaging technique for assessing interlayer electronic coupling in van der Waals heterostructures, applicable to various fabrication methods.
Findings
Bright-field imaging reveals layer thickness and interface quality.
Thermal annealing and twist angle influence interlayer exciton emergence.
Technique is sensitive to material and crystal thickness variations.
Abstract
Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for developing a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influencing the hybridisation of the electronic states as well as charge and energy transfer between the layers. The electronic coupling is affected by the relative orientation of the layers as well as by the cleanliness of their interfaces. Here, we demonstrate an efficient method for monitoring interlayer coupling in heterostructures made from transition metal dichalcogenides using photoluminescence imaging in a bright-field optical microscope. The colour and brightness in such images are used here…
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