Oscillating magnetoresistance in graphene p-n junctions at intermediate magnetic fields

TL;DR

This paper reports the observation of magnetoresistance oscillations in graphene p-n junctions at intermediate magnetic fields, persisting up to 30 K, and explains them through tight-binding simulations related to density of states modulation.

Contribution

It presents experimental evidence of oscillations in graphene p-n junctions at intermediate fields and temperature, supported by theoretical simulations, expanding understanding of magnetoresistance phenomena.

Findings

Oscillations observed in six graphene samples.

Oscillations persist up to 30 K.

Simulations reproduce the oscillatory behavior.

Abstract

We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p- regions.