Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks

TL;DR

This paper demonstrates a high-performance 3D nanoporous graphene transistor that preserves Dirac fermion properties, offering significantly enhanced electrical conductance and capacitance compared to 2D graphene, with potential for advanced electronic applications.

Contribution

It introduces a novel 3D nanoporous graphene structure that maintains Dirac fermion characteristics and achieves superior electronic performance in transistor devices.

Findings

Carrier mobility of 5000-7500 cm²V⁻¹s⁻¹

Electric conductance and capacitance 100-1000 times higher than 2D graphene

Observation of nonlinear Hall resistance across various gate voltages

Abstract

Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D transistors with a sufficient processor capacity. Although there are many attempts to assemble 2D graphene into 3D structures, the characteristics of massless Dirac fermions cannot be well preserved in these materials for transistor applications. Here we report a high-performance graphene transistor by utilizing 3D nanoporous graphene which is comprised of an interconnected single graphene sheet and a commodious open porosity to infuse an ionic liquid for a tunable electronic state by applying electric fields. The 3D nanoporous graphene transistor, with high carrier mobility of 5000-7500 cm$^2$V$^{-1}$s$^{-1}$, exhibits two to three orders of magnitude higher electric conductance and capacitance than those of 2D graphene devices, along with preserved ambipolor electronic nature of Dirac cones. Moreover, the 3D graphene networks with Dirac fermions turn out to exhibit a unique nonlinear Hall resistance in a wide range of the gate voltages. The high quality 3D nanoporous graphene EDLT may open a new field for utilizing Dirac fermions in 3D network structures for various fundamental and practical applications.