Reaction-Drift Model for Switching Transients in Pr$_{0.7}$Ca$_{0.3}$MnO$_3$ Based Resistive RAM

TL;DR

This paper introduces a Reaction-Drift model combined with drift-diffusion and self-heating to accurately simulate switching transients in PCMO-based RRAM across a wide timescale, capturing key experimental behaviors.

Contribution

The novel Reaction-Drift model incorporating ionic transport extends previous models, enabling comprehensive simulation of resistive switching in PCMO RRAM over multiple timescales.

Findings

Reproduces entire transient behavior from nanoseconds to seconds.

Captures universal RESET log(I)~m*log(t) behavior with m≈-1/10.

Replicates voltage-time characteristics for various temperatures.

Abstract

Earlier, the DC hole-current modeling of PCMO RRAM by drift-diffusion (DD) including self-heating (SH) in TCAD (but without ionic transport) was able to explain the experimentally observed SCLC characteristics, prior to resistive switching. Further, transient analysis using DD+SH model was able to reproduce the experimentally observed fast current increase at ~100ns timescale followed by saturation increases, prior to resistive switching. However, resistive switching requires the inclusion of ionic transport. We propose a Reaction-Drift (RD) model of oxide ions, which is combined with the DD+SH model. Experimentally, SET operations consist of 3 stages and RESET operations consists of 4 stages. The DD+SH+RD model is able to reproduce the entire transient behavior over 10$^{-8}$-1s range in timescale for both SET and RESET operations for a range of bias, temperature. Remarkably, a universal RESET behaviour of $log(I)\propto m*log(t)$, where $m\approx -1/10$, is reproduced. The quantitatively different voltage time dilemma for SET and RESET is also replicated for a range of ambient temperature. This demonstrates a comprehensive model for resistance switching in PCMO based RRAM.