Strain-balanced type-II superlattices for efficient multi-junction solar cells

TL;DR

This paper introduces strain-balanced type-II GaAsSb/GaAsN superlattices as a novel, lattice-matched material for 1 eV sub-cells in multi-junction solar cells, improving efficiency and crystal quality.

Contribution

It demonstrates a new superlattice design with controlled bandgap and improved interface quality for enhanced solar cell performance.

Findings

Enhanced external quantum efficiency under photovoltaic conditions.

Reduced clustering and improved interface abruptness.

Controlled bandgap in the 1.0-1.15 eV spectral region.

Abstract

We propose type-II GaAsSb/GaAsN superlattices (SLs) lattice-matched to GaAs as a novel material for the 1 eV sub-cells present in highly efficient GaAs/Ge-based multi-junction solar cells. We demonstrate that, among other benefits, the spatial separation of Sb and N allows a better control over composition and lattice matching, avoiding the growth problems related to the concomitant presence of both elements in GaAsSbN layers. This approach not only reduces clustering and improves crystal quality and interface abruptness, but also allows for additional control of the effective bandgap in the 1.0-1.15 eV spectral region through the SL period thickness. The optimized SL structure exhibits a type-II band alignment and strong electronic coupling at 0 V. Both effects cooperate to increase the minority carrier collection and leads to a net strong enhancement of the external quantum efficiency (EQE) under photovoltaic conditions with respect to bulk layers of equivalent thickness.