Ultrafast all-optical gated amplifier based on ZnO nanowire lasing

TL;DR

This paper introduces an ultrafast all-optical gated amplifier using ZnO nanowire lasers, achieving rapid, high-gain optical signal amplification with sub-picosecond response times.

Contribution

It demonstrates a novel nanowire laser-based optical amplifier with ultrafast gating and high amplification, advancing integrated photonic device capabilities.

Findings

Transmission increased up to 34 times for 385-nm light.

Lasing self-quenches in 1.2 ps, enabling ultrafast response.

Amplifier operates via dense electron-hole plasma excitation.

Abstract

We present an ultrafast all-optical gated amplifier, or transistor, consisting of a forest of ZnO nanowire lasers. A gate light pulse creates a dense electron-hole plasma and excites laser action inside the nanowires. Source light traversing the nanolaser forest is amplified, partly as it is guided through the nanowires, and partly as it propagates diffusively through the forest. We have measured transmission increases at the drain up to a factor 34 for 385-nm light. Time-resolved amplification measurements show that the lasing is rapidly self-quenching, yielding pulse responses as short as 1.2 ps.