Strongly temperature dependent resistance of meander-patterned graphene

TL;DR

This study investigates the temperature-dependent resistance of meander-patterned graphene, revealing weak localization effects and potential applications in bolometric photodetectors.

Contribution

It provides a detailed analysis of the temperature dependence of resistance in large-scale graphene devices and links it to quantum interference effects.

Findings

Resistance strongly depends on temperature from 1.5 K to 77 K.

Weak localization explains the temperature dependence.

High resistance at quantum Hall regime suggests photodetector applications.

Abstract

We have studied the electronic properties of epitaxial graphene devices patterned in a meander shape with the length up to a few centimeters and the width of few tens of microns. These samples show a pronounced dependence of the resistance on temperature. Accurate comparison with theory shows that this temperature dependence originates from the weak localization effect observed over a broad temperature range from 1.5 K up to 77 K. The comparison allows us to estimate the characteristic times related to quantum interference. In addition, a large resistance enhancement with temperature is observed at the quantum Hall regime near the filling factor of 2. Record high resistance and its strong temperature dependence are favorable for the construction of bolometric photodetectors.