Performance of arsenene and antimonene double-gate MOSFETs from first principles

TL;DR

This study uses multiscale simulations combining first-principles and tight-binding methods to evaluate arsenene and antimonene monolayer-based MOSFETs, showing they meet industry performance standards at sub-10 nm scales.

Contribution

It provides the first detailed estimates of electron and hole mobilities in arsenene and antimonene transistors, incorporating spin-orbit and multi-valley effects.

Findings

Ultra-scaled devices show performance compliant with industry standards.

First estimates of electron and hole mobilities including complex effects.

Devices maintain high performance at sub-10 nm scale.

Abstract

In the race towards high-performance ultra-scaled devices, two-dimensional materials offer an alternative paradigm thanks to their atomic thickness suppressing short-channel effects. It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as channels. The accuracy of first-principles approaches in describing electronic properties is combined with the efficiency of tight-binding Hamiltonians based on maximally-localised Wannier functions to compute the transport properties of the devices. These simulations provide for the first time estimates on the upper limits for the electron and hole mobilities in the Takagi's approximation, including spin-orbit and multi-valley effects, and demonstrate that ultra-scaled devices in the sub-10 nm scale show a performance that is compliant with industry requirements.