Polarization anisotropy of the emission from type-II quantum dots

TL;DR

This paper investigates the polarization anisotropy of emission from type-II GaAsSb capped InAs quantum dots, combining theoretical calculations and experimental measurements to explore their potential for photonic applications.

Contribution

It provides a combined theoretical and experimental analysis of polarization anisotropy in type-II quantum dots, proposing practical applications in photonic devices.

Findings

Polarization anisotropy reveals the hole wavefunction's vertical position and orientation.

Experimental verification confirms theoretical predictions.

Potential application as room-temperature photonic gates at communication wavelengths.

Abstract

We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k.p framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wavefunction and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given.