{\pi}-Conjugation in Epitaxial Si(111)-($\sqrt3$$\times$$\sqrt3$) Surface: an Unconventional "Bamboo Hat" Bonding Geometry for Si

TL;DR

This paper proposes a novel { extpi}-conjugation and charge-transfer model to explain the unique 'bamboo hat' surface structure of epitaxial Si(111) surfaces, providing insights into its stability and potential for exotic electronic states.

Contribution

It introduces a new { extpi}-conjugation plus charge-transfer model to explain the 'bamboo hat' geometry in Si surfaces, supported by first-principles calculations.

Findings

The 'bamboo hat' structure is stabilized by { extpi}-conjugation and charge transfer.

First-principles calculations confirm the stability of the proposed structure.

Predicted metastable reconstructions suggest potential for exotic electronic states.

Abstract

The newly observed ($\sqrt3$$\times$$\sqrt3$) surface reconstruction in heteroepitaxial Si(111) thin films on metal substrates is widely considered as a promising platform to realize 2D Dirac and topological states, yet its formation mechanism and structural stability are poorly understood, leading to the controversial terminology of "multilayer silicene". Based on valence bond and conjugation theory, we propose a {\pi}-conjugation plus charge-transfer model to elucidate such a unique "bamboo hat" surface geometry. The formation of planar ring-shaped {\pi}-conjugation and charge transfer from the rings to upper buckled Si atoms greatly lower the surface dangling bond energy. We justify this unconventional Si structural model by analyzing from first-principles surface energies and surface stress tensors as a function of strain. Within the same formalism, additional metastable surface reconstructions with the similar "bamboo hat" features are predicted which opens possibilities to other exotic electronic states in silicon.