Characterization of YbNi$_4$(P$_{1-{\it x}}$As$_{\it x}$)$_2$, $x = 0, 0.2$ single crystals grown by Czochralski method

TL;DR

This study reports the growth and characterization of single crystals of YbNi$_4$(P$_{1-x}$As$_x$)$_2$ using the Czochralski method, enabling precise electrical resistivity measurements and analysis of As distribution homogeneity.

Contribution

It presents a novel crystal growth process for YbNi$_4$(P$_{1-x}$As$_x$)$_2$ and provides detailed electrical resistivity data and compositional analysis.

Findings

Successful growth of large single crystals of YbNi$_4$P$_2$.

Determination of absolute electrical resistivity values.

Assessment of As distribution homogeneity in the substituted compound.

Abstract

We have investigated large single crystals of YbNi$_4$P$_2$ that were grown from a levitating melt by the Czochralski method. The new samples facilitate the determination of the absolute values of the electrical resistivity. Phase pure polycrystalline samples of the non-magnetic reference LuNi$_4$P$_2$ were prepared and the electrical resistivity was measured. Furthermore we have grown a single crystal of the As substituted compound YbNi$_4$(P$_{1-{\it x}}$As$_{\it x}$)$_2$, $x = 0.2$ and investigated the homogenity of the As distribution.