Junction termination extension (JTE) with variation lateral doping (VLD) optimization method

TL;DR

This paper presents a new optimization method for junction termination design using a variable lateral charge function, demonstrated on high-voltage diode edge termination to improve breakdown voltage.

Contribution

Introduces a simple, effective optimization approach for junction termination using a flexible lateral charge function, enhancing breakdown voltage performance.

Findings

Achieved 93% of the 1D structure breakdown voltage

Demonstrated method effectiveness on 1800 V HV diode edge termination

Flexible shape adaptation of the lateral charge function

Abstract

A simple and effective method for the junction termination design was suggested. Optimization method uses lateral charge function F(x) which depends from two arguments and can be changed in wide range of shapes. To demonstrate method effectiveness, design and optimization example for the HV diode (1800 V) edge termination was shown. Achieved breakdown voltage is 93% of the corresponding 1D structure breakdown voltage.