Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations

TL;DR

This paper introduces a comprehensive TCAD simulation model that combines bulk and surface radiation damage effects, validated at very high fluences, to improve silicon detector design for future high-energy physics experiments.

Contribution

A novel combined damage model integrating surface and bulk effects in TCAD simulations, validated against high-fluence experimental data for silicon detectors.

Findings

Model accurately predicts damage effects at high fluences

Simulation results align with experimental measurements

Enhanced detector design capabilities for HL-LHC applications

Abstract

In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed at the High Luminosity LHC. In particular, a surface damage model has been developed by introducing the relevant parameters (NOX, NIT) extracted from experimental measurements carried out on p-type substrate test structures after gamma irradiations at doses in the range 10-500 Mrad(Si). An extended bulk model, by considering impact ionization and deep-level cross-sections variation, was included as well. The model has been validated through the comparison of the simulation findings with experimental measurements carried out at very high fluences (2 10^16 1 MeV equivalent n/cm^2) thus fostering the application of this TCAD approach for the design and optimization of the new generation of silicon detectors to be used in future HEP experiments.