Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors

TL;DR

This paper presents a combined modeling approach using TCAD simulations to analyze bulk and surface radiation damage effects in silicon detectors at very high neutron fluences, validated by experimental measurements.

Contribution

It introduces a novel integrated damage model for device-level simulation of silicon detectors under extreme radiation conditions, combining bulk and surface damage effects.

Findings

Effective simulation of high-fluence radiation damage in silicon detectors.

Validation of models with experimental data from gamma-irradiated structures.

Enhanced understanding of damage mechanisms at the device level.

Abstract

In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1{\div}2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.