CoMET: Composite-Input Magnetoelectric-based Logic Technology

TL;DR

CoMET is a novel spintronics logic device leveraging magnetoelectric effects for fast, low-energy computation, with optimized parameters demonstrating sub-100ps delays and femtojoule energy consumption in 7nm technology.

Contribution

This paper introduces CoMET, a new composite-input magnetoelectric logic device with optimized performance parameters for efficient spintronic logic applications.

Findings

Achieves 98ps delay for inverter operations.

Consumes as low as 68aJ energy per operation.

Demonstrates potential for scalable, energy-efficient logic circuits.

Abstract

This work proposes CoMET, a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure - a ferromagnet (FM) with in-plane magnetic anisotropy (IMA) placed on top of an intra-gate FM interconnect with perpendicular magnetic anisotropy (PMA). Through the magnetoelectric (ME) effect, the input voltage nucleates a domain wall (DW) at the input end of the PMA-FM interconnect. An applied current then rapidly propagates the DW towards the output FE structure, where the inverse-ME effect generates an output voltage. This voltage is propagated to the input of the next CoMET device using a novel circuit structure that enables efficient device cascading. The material parameters for CoMET are optimized by systematically exploring the impact of parameter choices on device performance. Simulations on a 7nm CoMET device show fast, low-energy operation, with a delay/energy of 98ps/68aJ for INV and 135ps/85aJ for MAJ3.