Epitaxial graphene on SiC: 2D sheets, selective growth and nanoribbons

TL;DR

This paper reviews epitaxial graphene growth on SiC, focusing on multilayer and monolayer structures, selective growth techniques, and the fabrication of graphene nanoribbons for potential large-scale integration.

Contribution

It introduces recent advances in selective growth and nanostructuring of epitaxial graphene on SiC, including templated nanoribbons and integration schemes.

Findings

Successful growth of well-confined graphene nanoribbons

Development of masks for selective growth

Scheme for large-scale ribbon array integration

Abstract

Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures under growth-arresting or growth-enhancing masks. Recent developments in the growth of templated graphene nanostructures are also presented, as exemplified by tens of micron long very well confined and isolated 20-40nm wide graphene ribbons. Scheme for large scale integration of ribbon arrays with Si wafer is also presented.