Probing Electron Spin Resonance in Monolayer Graphene

TL;DR

This study measures the electron spin resonance in monolayer graphene, revealing a consistent g-factor unaffected by charge variations, which is crucial for understanding spin properties in graphene-based applications.

Contribution

It provides the first resistively detected ESR measurement of monolayer graphene's g-factor, showing its insensitivity to charge carrier changes.

Findings

g-factor measured at 1.952+/-0.002

Magnetic moment unaffected by charge carrier type

Results enhance understanding of spin properties in graphene

Abstract

The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility.