Thickness-tuned transition of band topology in ZrTe5 nanosheets

TL;DR

This study demonstrates a thickness-dependent transition in the electronic band topology of ZrTe5 nanosheets, shifting from a topological semimetal to a conventional hole carrier system as thickness decreases below 40 nm.

Contribution

It provides experimental evidence of a tunable topological phase transition in ZrTe5 nanosheets driven by thickness reduction, revealing the evolution of carrier types and Fermi level shifts.

Findings

Transition from topological semimetal to hole-dominated conduction below 40 nm

Fermi level shifts downward with decreasing thickness

Resistivity peak temperature T* varies non-monotonically with thickness

Abstract

We report thickness-tuned electrical transport and Hall resistivity in highly anisotropic three-dimensional Dirac semimetal ZrTe5 nanosheets. We find that when the thickness of the nanosheet is blow about 40 nm, the system takes a clear transition from topological semimetal with two bands carriers to a single band with conventional hole carriers. The resistivity peak temperature T* decreases systematically with decreasing thickness down to about 40 nm, then shifts up with the further decrease of the thickness. Analysis of the data below 40 nm indicates that the hole carriers completely dominate the transport in the entire temperature range, regardless of the temperature being below or above T*. By further tracking the carrier density, we find that the Fermi level shifts consecutively downward from conduction band to the valence band as decreasing the thickness. Our experiments unambiguously reveal a highly thickness-tuned transition of band topology in ZrTe5 nanosheets.