A heterogeneous III-V/silicon integration platform for on-chip quantum photonic circuits with single quantum dot devices

TL;DR

This paper presents a scalable heterogeneous integration platform combining III-V nanophotonic devices with silicon nitride circuits, enabling efficient single-photon sources and advanced quantum photonic functionalities.

Contribution

It introduces a novel integration platform that combines GaAs quantum dot devices with Si3N4 photonic circuits, enhancing scalability and performance for quantum photonics.

Findings

Single-photon emission demonstrated from quantum dots in GaAs waveguides

Evanescent coupling achieves >90% efficiency into Si3N4 waveguides

Platform enables scalable, efficient integrated quantum photonic devices

Abstract

Photonic integration is an enabling technology for photonic quantum science, offering greater scalability, stability, and functionality than traditional bulk optics. Here, we describe a scalable, heterogeneous III-V/silicon integration platform to produce Si$_3$N$_4$ photonic circuits incorporating GaAs-based nanophotonic devices containing self-assembled InAs/GaAs quantum dots. We demonstrate pure singlephoton emission from individual quantum dots in GaAs waveguides and cavities - where strong control of spontaneous emission rate is observed - directly launched into Si$_3$N$_4$ waveguides with > 90 % efficiency through evanescent coupling. To date, InAs/GaAs quantum dots constitute the most promising solidstate triggered single-photon sources, offering bright, pure and indistinguishable emission that can be electrically and optically controlled. Si$_3$N$_4$ waveguides offer low-loss propagation, tailorable dispersion and high Kerr nonlinearities, desirable for linear and nonlinear optical signal processing down to the quantum level. We combine these two in an integration platform that will enable a new class of scalable, efficient and versatile integrated quantum photonic devices