Upscaling High-Quality CVD Graphene Devices to 100 Micron-Scale and Beyond

TL;DR

This paper presents a highly effective method for transferring large-scale CVD-grown graphene sheets, enabling fabrication of devices up to several centimeters with high quality confirmed by transport measurements and quantum Hall effect observations.

Contribution

A novel transfer process for ultra large-scale CVD graphene that minimizes damage and preserves high mobility, facilitating scalable device fabrication.

Findings

Large-area graphene sheets up to several cm² successfully transferred.

High carrier mobility confirmed by quantum Hall effect.

Post-fabrication annealing improves electrical stability and reduces hysteresis.

Abstract

We describe a method for transferring ultra large-scale CVD-grown graphene sheets. These samples can be fabricated as large as several cm$^2$ and are characterized by magneto-transport measurements on SiO$_2$ substrates. The process we have developed is highly effective and limits damage to the graphene all the way through metal liftoff, as shown in carrier mobility measurements and the observation of the quantum Hall effect. The charge-neutral point is shown to move drastically to near-zero gate voltage after a 2-step post-fabrication annealing process, which also allows for greatly diminished hysteresis.