Metal-insulator transition in a strongly-correlated two-dimensional electron system

TL;DR

This paper discusses experimental findings on the metal-insulator transition in strongly correlated two-dimensional electron systems, highlighting enhanced spin susceptibility, effective mass, and thermopower in low-disordered silicon MOSFETs.

Contribution

It provides new experimental insights into the behavior of strongly interacting 2D electron systems near the metal-insulator transition.

Findings

Enhanced spin susceptibility observed near transition

Significant increase in effective mass in low-disorder systems

Thermopower shows notable changes indicating strong correlations

Abstract

Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility, effective mass, and thermopower in low-disordered silicon MOSFETs.