Tunneling anomalous Hall effect in the nanogranular CoFe-B-Al-O films near the metal-insulator transition
V.V. Rylkov, S.N. Nikolaev, K.Yu. Chernoglazov, V.A. Demin, A.V., Sitnikov, M.Yu. Presnyakov, A.L. Vasiliev, N.S. Perov, A.S. Vedeneev, Yu.E., Kalinin, V.V. Tugushev, A.B. Granovsky

TL;DR
This study investigates the tunneling anomalous Hall effect in nanogranular CoFe-B-Al-O films near the metal-insulator transition, revealing distinct scaling laws and providing experimental evidence for TAHE.
Contribution
First experimental demonstration of tunneling anomalous Hall effect in nanogranular films near the metal-insulator transition.
Findings
Scaling laws differ with temperature and metal content.
Conductivity follows lnT behavior indicating strong tunnel coupling.
Evidence supports phenomenological model of two AHE sources.
Abstract
We present results of experimental studies of structural, magneto-transport and magnetic properties of CoFe-B-Al-O films deposited onto a glass ceramic substrate by the ion-beam sputtering of the target composed of Co40Fe40B20 and Al2O3 plates. The system consists on the strained crystalline CoFe metallic nanogranules with the size 2-5 nm which are embedded into the B-Al-O oxide insulating matrix. Our investigations are focused on the anomalous Hall effect (AHE) resistivity Rh and longitudinal resistivity R at T=5-200 K on the metallic side of metal-insulator transition in samples with the metal content x=49-56 at.%, that nominally corresponds to (Co40Fe40B20)x(Al2O3)100-x in the formula approximation. The conductivity at T > 15 K follows the lnT behavior that matches a strong tunnel coupling between nanogranules. It is shown that the scaling power-laws between AHE resistivity and…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
