Anisotropic Raman Scattering and Mobility in Monolayer 1Td-ReS2 Controlled by Strain Engineering

TL;DR

This study uses theoretical methods to explore how strain engineering can control anisotropic Raman scattering and significantly enhance electronic mobility in monolayer ReS2, a 2D transition metal dichalcogenide.

Contribution

It demonstrates how external strain can be used to manipulate the structural and electronic properties of ReS2, leading to increased mobility cut-on rate and potential device applications.

Findings

Strain can increase mobility cut-on rate by nearly six times.

Angle-dependent Raman spectra reveal structural anisotropy.

Strain engineering can optimize electronic properties for devices.

Abstract

Regulation of electronic structure and mobility cut-on rate in two-dimensional transition metal dichalcogenides (TMDs) has attracted much attention because of its potential in electronic device design. The anisotropic Raman scattering and mobility cut-on rate of monolayer unique distorted-1T(1Td) ReS2 with external strain are determined theoretically based on the density function theory. The angle-dependent Raman spectrum of Ag-like, Eg-like and Cp models are used to discriminate and analysis structural anisotropy; the strain is exploited to adjust the structural symmetry and electronic structure of ReS2 so as to enhance mobility cut-on rate to almost 6 times of the original value. Our results suggest the use of the strain engineering in high-quality semiconductor switch device.