TiO$_2$-based Memristors and ReRAM: Materials, Mechanisms and Models (a Review)

TL;DR

This review comprehensively summarizes the current state of TiO$_2$-based memristors and ReRAM, focusing on materials, switching mechanisms, and models to inform future research and development.

Contribution

It provides an integrated overview of TiO$_2$-based memristors and ReRAM, highlighting their shared mechanisms and potential for mutual advancement.

Findings

TiO$_2$ is a key material for memristors and ReRAM.

Understanding switching mechanisms aids in device optimization.

Models help predict device behavior and guide design improvements.

Abstract

The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall summarise the state of the art for these closely-related fields, concentrating on titanium dioxide, the well-utilised and archetypal material for both. We shall cover material properties, switching mechanisms and models to demonstrate what ReRAM and memristor scientists can learn from each other and examine the outlook for these technologies.