Concurrent growth and formation of electrically contacted monolayer transition metal dichalcogenides on bulk metallic patterns

TL;DR

This paper presents a chemical vapor deposition method for deterministic growth of monolayer transition metal dichalcogenides on metallic patterns that serve as both growth sites and electrical contacts, enabling scalable device fabrication.

Contribution

It introduces a novel process for selective, large-area growth of 2D materials with integrated metallic contacts directly during synthesis.

Findings

Successful growth of large-area monolayer TMDs on patterned metals

Observation of heterostructured MoS2/WS2 growth

Materials exhibit strong luminescence and Raman signatures

Abstract

While new species and properties of two-dimensional (2D) materials are being reported with extraordinary regularity, a significant bottleneck in the field is the ability to controllably process material into working devices. We report a chemical vapor deposition process to selectively grow 2D material in a deterministic manner around lithographically defined bulk metallic patterns which concurrently provide as-grown contacts to the material. Monolayer films, with lateral extent of up to hundreds of microns are controllably grown on and around patterned regions of transition metals. By using different combinations of metallic pattern and oxide based precursor, heterostructured MoS2/WS2 growth has been observed as well. The materials display strong luminescence, monolayer Raman signatures, and relatively large crystal domains. In addition to producing high optical quality monolayer material deterministically and selectively over large regions, the metallic patterns remain conductive and therefore have the advantage of providing as-grown metallic contacts to the material, offering a path for simple device fabrication and large scale production