Ultrasensitive Self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes

TL;DR

This paper presents a highly sensitive, self-powered GaN UV photodetector with reduced graphene oxide electrodes, demonstrating significantly improved photosensitivity and fast response at zero bias compared to traditional GaN devices.

Contribution

The study introduces a novel hybrid r-GO/GaN UV photodetector with ultrasensitive, self-powered operation and enhanced performance metrics, including high responsivity and rapid response times.

Findings

Photosensitivity of ~85% at zero bias

Responsivity of 1.54 mA/W and detectivity of 1.45x10^10 Jones

Fast response time of 60 ms

Abstract

A simplistic design of a self-powered UV-photodetector device based on hybrid r-GO/GaN is demonstrated. Under zero bias, the fabricated hybrid photodetector shows a photosensivity of ~ 85% while ohmic contact GaN photodetector with identical device structure exhibits only ~ 5.3% photosensivity at 350 nm illumination (18 microWatt/cm^2). The responsivity and detectivity of the hybrid device were found to be 1.54 mA/W and 1.45x10^10 Jones (cm Hz^(1/2) W^(-1)), respectively at zero bias under 350 nm illumination (18 microWatt/cm^2) with fast response (60 ms), recovery time (267 ms) and excellent repeatability. Power density-dependent responsivity & detectivity revealed ultrasensitive behaviour under low light conditions. The source of observed self-powered effect in hybrid photodetector is attributed to the depletion region formed at the r-GO and GaN quasi-ohmic interface.