Evolutionary optimization of a charge transfer ionic potential model for Ta/Ta-oxide hetero-interfaces
Kiran Sasikumar, Badri Narayanan, Mathew Cherukara, Alper Kinaci,, Fatih G. Sen, Stephen K. Gray, Maria K. Y. Chan, and Subramanian K. R. S., Sankaranarayanan

TL;DR
This paper develops a new charge transfer ionic potential model for Ta/Ta-oxide interfaces, enabling atomistic simulations of oxidation processes and interface properties with high accuracy, validated against experiments and DFT data.
Contribution
The paper introduces a novel CTIP model for Ta/Ta-oxide systems, optimized via genetic algorithms, to accurately simulate interface and oxidation phenomena at the atomic level.
Findings
The CTIP model accurately predicts structural and thermodynamic properties of Ta and Ta2O5.
The model reproduces elastic and surface properties consistent with experiments.
Simulations reveal insights into early oxidation stages of tantalum.
Abstract
Tantalum, tantalum oxide and their hetero-interfaces are of tremendous technological interest in several applications spanning electronics, thermal management, catalysis and biochemistry. For example, local oxygen stoichiometry variation in TaOx memristors comprising of metallic (Ta) and insulating oxide (Ta2O5) have been shown to result in fast switching on the sub-nanosecond timescale over a billion cycles, relevant to neuromorphic computation. Despite its broad importance, an atomistic scale understanding of oxygen stoichiometry variation across Ta/TaOx hetero-interfaces, such as during early stages of oxidation and oxide growth, is not well understood. This is mainly due to the lack of a variable charge interatomic potential model for tantalum oxides that can accurately describe the ionic interactions in the metallic (Ta) and oxide (TaOx) environment as well as at their interfaces.…
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