A first-principles model of copper-boron interactions in Si: implications for the light-induced degradation of solar Si
E. Wright, J. Coutinho, S. \"Oberg, V. J. B. Torres

TL;DR
This paper presents a first-principles model of copper-boron interactions in silicon, elucidating their role in light-induced degradation of solar cells by analyzing defect formation, interactions, and effects on carrier lifetime.
Contribution
It provides a detailed first-principles analysis of CuB defect formation, interaction, and their impact on Cu release and degradation in silicon solar cells, which was previously not well understood.
Findings
Coulomb-like long-range interaction between Cu and B
Short-range repulsive interaction reduces binding energy
Metastable CuB pairs create acceptor states near conduction band
Abstract
The recent discovery that Cu contamination of Si combined with light exposure has a significant detrimental impact on carrier life-time has drawn much concern within the solar-Si community. The effect, known as the copper-related light-induced degradation (Cu-LID) of Si solar cells, has been connected to the release of Cu interstitials within the bulk [Solar Energy Materials & Solar Cells, 147:115-126, 2016]. In this paper, we describe a comprehensive analysis of the formation/dissociation process of the CuB pair in Si by means of first-principles modelling, as well as the interaction of CuB defects with photo-excited minority carriers. We confirm that the long-range interaction between the Cu cation and the B anion has a Coulomb-like behaviour, in line with the trapping-limited diffusivity of Cu observed by transient ion drift measurements. On the other hand, the short-range…
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