Controlling friction in a manganite surface by resistive switching

TL;DR

This study demonstrates that the friction of a manganite thin film can be actively controlled by switching its electronic resistive state, enabling friction modulation without altering temperature or pressure.

Contribution

It introduces a method to control surface friction through resistive switching in manganite materials, linking electronic states to frictional behavior.

Findings

Friction decreases when the material switches to a conducting state.

Friction increases again when reverting to an insulating state.

Friction can be modulated actively via nanoscale resistance switching.

Abstract

We report a significant change in friction of a $\rm La_{0.55}Ca_{0.45}MnO_3$ thin film measured as a function of the materials resistive state under ultrahigh vacuum conditions at room temperature by friction force microscopy. While friction is high in the insulating state, it clearly changes to lower values if the probed local region is switched to the conducting state via nanoscale resistance switching. Thus we demonstrate active control of friction without having to change the temperature or pressure. Upon switching back to an insulating state the friction increases again. The results are discussed in the framework of electronic friction effects and electrostatic interactions.