Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

TL;DR

This paper reports the development and simulation of a fully monolithic depleted CMOS pixel sensor in 150 nm technology, aiming to enhance the ATLAS Inner Tracker upgrade with fast, radiation-hard detection capabilities.

Contribution

It introduces a novel depleted monolithic CMOS sensor design in 150 nm technology, advancing the integration of fully monolithic sensors for high-energy physics applications.

Findings

Design details and simulation results demonstrate feasibility

Potential for improved radiation hardness and speed

Suitable for outer layers of ATLAS ITk upgrade

Abstract

The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.